Справочник MOSFET. SSM5H90ATU

 

SSM5H90ATU MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SSM5H90ATU
   Маркировка: KE4
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 2.2 nC
   Cossⓘ - Выходная емкость: 40 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: UFV

 Аналог (замена) для SSM5H90ATU

 

 

SSM5H90ATU Datasheet (PDF)

 ..1. Size:234K  toshiba
 ssm5h90atu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H90ATUComposite Devices Silicon N-Channel MOS/Diode Epitaxial PlanarSSM5H90ATUSSM5H90ATUSSM5H90ATUSSM5H90ATU1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) Combined an N-channel MOSFET and a diode in one package.2.1. MOSFET Features2.1. MOSFET Features2.1. MOSFET Features

 9.1. Size:267K  1
 ssm5h05tu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H05TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

 9.2. Size:222K  toshiba
 ssm5h06fe.pdf

SSM5H90ATU SSM5H90ATU

SSM5H06FE Silicon N Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5H06FE DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one Package 1.60.05 Small package 1.20.05Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating Unit 1 5Drain-Source voltage VDS 20 V 2VGSS 10 Gate-Source voltage V ID 100DC

 9.3. Size:201K  toshiba
 ssm5h12tu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H12TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H12TU DC-DC Converter Applications 1.8-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-source

 9.4. Size:220K  toshiba
 ssm5h11tu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H11TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H11TU DC-DC Converter Applications 4.0-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-source

 9.5. Size:309K  toshiba
 ssm5h07tu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H07TU Silicon N Channel MOS Type (-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H07TU DC-DC Converter Unit: mm Nch MOSFET and Schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.2Drain current A

 9.6. Size:205K  toshiba
 ssm5h01tu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H01TU Silicon N Channel MOS Type (U-MOSII)/Silicon Epitaxial Schottky Barrier Diode SSM5H01TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode into one Package. Low RDS (ON) and Low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 30 VGate-Source voltage VGSS 20 VDC ID 1.4Drain current

 9.7. Size:230K  toshiba
 ssm5h10tu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H10TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H10TU DC-DC Converter Applications 1.5-V drive Unit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 20 VGate-sourc

 9.8. Size:192K  toshiba
 ssm5h16tu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H16TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H16TU DC-DC Converter Applications 1.8-V driveUnit: mm Combined an N-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristic Symbol Rating UnitDrain-source voltage VDSS 30 VGate-sourc

 9.9. Size:304K  toshiba
 ssm5h05tu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H05TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H05TU DC-DC Converter Unit: mm Combined Nch MOSFET and Schottky Diode in one package. Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

 9.10. Size:306K  toshiba
 ssm5h08tu.pdf

SSM5H90ATU SSM5H90ATU

SSM5H08TU Silicon N Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5H08TU DC-DC Converter Unit: mm Nch MOSFET and schottky diode combined in one package Low RDS (ON) and low VF Absolute Maximum Ratings (Ta = 25C) MOSFET Characteristics Symbol Rating UnitDrain-Source voltage VDS 20 VGate-Source voltage VGSS 12 VDC ID 1.5Drain current A

Другие MOSFET... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
Back to Top