SSM60T03GP Todos los transistores

 

SSM60T03GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM60T03GP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 57.5 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO-220
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SSM60T03GP Datasheet (PDF)

 ..1. Size:385K  silicon standard
 ssm60t03gp ssm60t03gs.pdf pdf_icon

SSM60T03GP

SSM60T03GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 12mFast switching ID 45AGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM60T03GS is in a TO-263 package, which is widely used forDScommercial and industrial surface-mount applications. This device is TO-263 (S)suitable for low-voltage applications such as DC

 5.1. Size:617K  silicon standard
 ssm60t03gh ssm60t03gj.pdf pdf_icon

SSM60T03GP

SSM60T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM60T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 12msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 45AD The SSM60T03GH is in a TO-252 package, which isPb-free; RoHS

 6.1. Size:310K  silicon standard
 ssm60t03h ssm60t03j.pdf pdf_icon

SSM60T03GP

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History: FCPF165N65S3R0L | IRFPC42R | SIHF9540S | HITJ0203MP | IXTA240N055T7 | SPP80P06PH | IRF7306PBF

 

 
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