All MOSFET. SSM60T03GP Datasheet

 

SSM60T03GP MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSM60T03GP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 45 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 11.6 nC
   trⓘ - Rise Time: 57.5 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO-220

 SSM60T03GP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSM60T03GP Datasheet (PDF)

 ..1. Size:385K  silicon standard
 ssm60t03gp ssm60t03gs.pdf

SSM60T03GP SSM60T03GP

SSM60T03GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 12mFast switching ID 45AGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM60T03GS is in a TO-263 package, which is widely used forDScommercial and industrial surface-mount applications. This device is TO-263 (S)suitable for low-voltage applications such as DC

 5.1. Size:617K  silicon standard
 ssm60t03gh ssm60t03gj.pdf

SSM60T03GP SSM60T03GP

SSM60T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM60T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 12msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 45AD The SSM60T03GH is in a TO-252 package, which isPb-free; RoHS

 6.1. Size:310K  silicon standard
 ssm60t03h ssm60t03j.pdf

SSM60T03GP SSM60T03GP

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top