SSM60T03GP Datasheet and Replacement
Type Designator: SSM60T03GP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 57.5 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-220
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SSM60T03GP Datasheet (PDF)
ssm60t03gp ssm60t03gs.pdf

SSM60T03GP,SN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 12mFast switching ID 45AGPb-free, RoHS compliant.SDESCRIPTIONGThe SSM60T03GS is in a TO-263 package, which is widely used forDScommercial and industrial surface-mount applications. This device is TO-263 (S)suitable for low-voltage applications such as DC
ssm60t03gh ssm60t03gj.pdf

SSM60T03GH,JN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM60T03 acheives fast switching performanceBVDSS 30Vwith low gate charge without a complex drive circuit. It isRDS(ON) 12msuitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 45AD The SSM60T03GH is in a TO-252 package, which isPb-free; RoHS
Datasheet: SSM5H10TU , SSM5H11TU , SSM5H12TU , SSM5H16TU , SSM5H90ATU , SSM5P15FE , SSM60T03GH , SSM60T03GJ , IRF540 , SSM60T03GS , SSM630GP , SSM6618M , SSM6679GM , SSM6680GM , SSM6923O , SSM6G18NU , SSM6H19NU .
History: NTD4863N-1G | SWB051R08ES | MTC1016S6R | RU35122R | TK7A65W | UPA1774G | FSL230R
Keywords - SSM60T03GP MOSFET datasheet
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History: NTD4863N-1G | SWB051R08ES | MTC1016S6R | RU35122R | TK7A65W | UPA1774G | FSL230R



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