SSM60T03GP Datasheet: MOSFET, N-Ch, 30V, 45A. Full specification with pinout and replacement list

SSM60T03GP Datasheet. Specs and Replacement

Type Designator: SSM60T03GP 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57.5 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-220

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SSM60T03GP substitution

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SSM60T03GP datasheet

..1. Size:385K silicon standard
ssm60t03gp ssm60t03gs.pdf pdf_icon

SSM60T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 30V D Simple drive requirement RDS(ON) 12m Fast switching ID 45A G Pb-free, RoHS compliant. S DESCRIPTION G The SSM60T03GS is in a TO-263 package, which is widely used for D S commercial and industrial surface-mount applications. This device is TO-263 (S) suitable for low-voltage applications such as DC... See More ⇒

5.1. Size:617K silicon standard
ssm60t03gh ssm60t03gj.pdf pdf_icon

SSM60T03GH,J N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM60T03 acheives fast switching performance BVDSS 30V with low gate charge without a complex drive circuit. It is RDS(ON) 12m suitable for low voltage applications such as DC/DC converters and general load-switching circuits. I 45A D The SSM60T03GH is in a TO-252 package, which is Pb-free; RoHS... See More ⇒

6.1. Size:310K silicon standard
ssm60t03h ssm60t03j.pdf pdf_icon