IRLR014 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95360AIRLR014PbFIRLU014PbF Lead-Free1/10/05Document Number: 91321 www.vishay.com1IRLR/U014PbFDocument Number: 91321 www.vishay.com2IRLR/U014PbFDocument Number: 91321 www.vishay.com3IRLR/U014PbFDocument Number: 91321 www.vishay.com4IRLR/U014PbFDocument Number: 91321 www.vishay.com5IRLR/U014PbFDocument Number: 91321 www.vishay.com6IRLR/U01

IRLR014, IRLU014, SiHLR014, SiHLU014Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR014/SiHLR014)RDS(on) ()VGS = 5.0 V 0.20RoHS* Straight Lead (IRLU014/SiHLU014)Qg (Max.) (nC) 8.4COMPLIANTQgs (nC) 3.5 Available in Tape and ReelQgd (nC) 6.0 Logic-Level Gate DriveConfiguration Singl

PD - 95551BIRLR014NPbFIRLU014NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Surface Mount (IRLR024N)Dl Straight Lead (IRLU024N)VDSS = 55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.14l Fully Avalanche RatedGl Lead-FreeID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achiev

PD- 94350IRLR/U014NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.14G Fast Switching Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance

AUTOMOTIVE GRADEPD - 97740AUIRLR014N Advanced Planar Technology Logic-Level Gate DriveHEXFET Power MOSFET Low On-ResistanceD Dynamic dV/dT RatingV(BR)DSS55V 175C Operating Temperature Fast SwitchingRDS(on) max.0.14G Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID 10AS Lead-Free, RoHS Compliant Auto

PD- 94350IRLR/U014NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.14G Fast Switching Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance

IRLR/U014AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.155 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.2 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.122 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ra

IRLR014NTRPwww.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters M

Isc N-Channel MOSFET Transistor IRLR014AFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta