IRLR014 Todos los transistores

 

IRLR014 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRLR014

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 8.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2 V

Carga de compuerta (Qg): 8.4 nC

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Empaquetado / Estuche: DPAK

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IRLR014 Datasheet (PDF)

1.1. irlr014npbf irlu014npbf.pdf Size:287K _international_rectifier

IRLR014
IRLR014

PD - 95551B IRLR014NPbF IRLU014NPbF HEXFET® Power MOSFET l Logic-Level Gate Drive l Surface Mount (IRLR024N) D l Straight Lead (IRLU024N) VDSS = 55V l Advanced Process Technology l Fast Switching RDS(on) = 0.14Ω l Fully Avalanche Rated G l Lead-Free ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

1.2. irlr014.pdf Size:169K _international_rectifier

IRLR014
IRLR014

 1.3. irlr014pbf irlu014pbf.pdf Size:1143K _international_rectifier

IRLR014
IRLR014

PD - 95360A IRLR014PbF IRLU014PbF Lead-Free 1/10/05 Document Number: 91321 www.vishay.com 1 IRLR/U014PbF Document Number: 91321 www.vishay.com 2 IRLR/U014PbF Document Number: 91321 www.vishay.com 3 IRLR/U014PbF Document Number: 91321 www.vishay.com 4 IRLR/U014PbF Document Number: 91321 www.vishay.com 5 IRLR/U014PbF Document Number: 91321 www.vishay.com 6 IRLR/U014PbF

1.4. irlr014n.pdf Size:110K _international_rectifier

IRLR014
IRLR014

PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.14? G Fast Switching Fully Avalanche Rated ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per s

 1.5. irlr014n irlu014n.pdf Size:116K _international_rectifier

IRLR014
IRLR014

PD- 94350 IRLR/U014N HEXFET® Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.14Ω G Fast Switching Fully Avalanche Rated ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

1.6. irlr014a.pdf Size:214K _samsung

IRLR014
IRLR014

IRLR/U014A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.155? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.2 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.122 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings S

1.7. irlr014 irlu014 sihlr014 sihlu014.pdf Size:2163K _vishay

IRLR014
IRLR014

IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Surface Mount (IRLR014/SiHLR014) RDS(on) (?)VGS = 5.0 V 0.20 RoHS* Straight Lead (IRLU014/SiHLU014) Qg (Max.) (nC) 8.4 COMPLIANT Qgs (nC) 3.5 Available in Tape and Reel Qgd (nC) 6.0 Logic-Level Gate Drive Configuration Single RDS(on) S

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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