IRLR014 - описание и поиск аналогов

PD - 95360A IRLR014PbF IRLU014PbF Lead-Free 1/10/05 Document Number 91321 www.vishay.com 1 IRLR/U014PbF Document Number 91321 www.vishay.com 2 IRLR/U014PbF Document Number 91321 www.vishay.com 3 IRLR/U014PbF Document Number 91321 www.vishay.com 4 IRLR/U014PbF Document Number 91321 www.vishay.com 5 IRLR/U014PbF Document Number 91321 www.vishay.com 6 IRLR/U01

IRLR014, IRLU014, SiHLR014, SiHLU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available Surface Mount (IRLR014/SiHLR014) RDS(on) ( )VGS = 5.0 V 0.20 RoHS* Straight Lead (IRLU014/SiHLU014) Qg (Max.) (nC) 8.4 COMPLIANT Qgs (nC) 3.5 Available in Tape and Reel Qgd (nC) 6.0 Logic-Level Gate Drive Configuration Singl

PD - 95551B IRLR014NPbF IRLU014NPbF HEXFET Power MOSFET l Logic-Level Gate Drive l Surface Mount (IRLR024N) D l Straight Lead (IRLU024N) VDSS = 55V l Advanced Process Technology l Fast Switching RDS(on) = 0.14 l Fully Avalanche Rated G l Lead-Free ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev

PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.14 G Fast Switching Fully Avalanche Rated ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

AUTOMOTIVE GRADE PD - 97740 AUIRLR014N Advanced Planar Technology Logic-Level Gate Drive HEXFET Power MOSFET Low On-Resistance D Dynamic dV/dT Rating V(BR)DSS 55V 175 C Operating Temperature Fast Switching RDS(on) max. 0.14 G Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID 10A S Lead-Free, RoHS Compliant Auto

PD- 94350 IRLR/U014N HEXFET Power MOSFET Logic-Level Gate Drive D Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process Technology RDS(on) = 0.14 G Fast Switching Fully Avalanche Rated ID = 10A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRLR/U014A Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.155 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.2 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.122 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ra

IRLR014NTRP www.VBsemi.com N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters M

Isc N-Channel MOSFET Transistor IRLR014A FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta