All MOSFET. IRLR014 Datasheet

 

IRLR014 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLR014
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 25 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 10 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V
   Maximum Drain Current |Id|: 7.7 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 8.4(max) nC
   Rise Time (tr): 110 nS
   Drain-Source Capacitance (Cd): 170 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
   Package: TO252

 IRLR014 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLR014 Datasheet (PDF)

 ..1. Size:286K  1
irlu014 irlr014.pdf

IRLR014 IRLR014

 ..2. Size:1143K  international rectifier
irlr014pbf irlu014pbf.pdf

IRLR014 IRLR014

PD - 95360AIRLR014PbFIRLU014PbF Lead-Free1/10/05Document Number: 91321 www.vishay.com1IRLR/U014PbFDocument Number: 91321 www.vishay.com2IRLR/U014PbFDocument Number: 91321 www.vishay.com3IRLR/U014PbFDocument Number: 91321 www.vishay.com4IRLR/U014PbFDocument Number: 91321 www.vishay.com5IRLR/U014PbFDocument Number: 91321 www.vishay.com6IRLR/U01

 ..3. Size:169K  international rectifier
irlr014.pdf

IRLR014 IRLR014

 ..4. Size:2163K  vishay
irlr014 irlu014 sihlr014 sihlu014.pdf

IRLR014 IRLR014

IRLR014, IRLU014, SiHLR014, SiHLU014Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available Surface Mount (IRLR014/SiHLR014)RDS(on) ()VGS = 5.0 V 0.20RoHS* Straight Lead (IRLU014/SiHLU014)Qg (Max.) (nC) 8.4COMPLIANTQgs (nC) 3.5 Available in Tape and ReelQgd (nC) 6.0 Logic-Level Gate DriveConfiguration Singl

 0.1. Size:342K  1
irlu014a irlr014a.pdf

IRLR014 IRLR014

 0.2. Size:287K  international rectifier
irlr014npbf irlu014npbf.pdf

IRLR014 IRLR014

PD - 95551BIRLR014NPbFIRLU014NPbFHEXFET Power MOSFETl Logic-Level Gate Drivel Surface Mount (IRLR024N)Dl Straight Lead (IRLU024N)VDSS = 55Vl Advanced Process Technologyl Fast SwitchingRDS(on) = 0.14l Fully Avalanche RatedGl Lead-FreeID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilizeadvanced processing techniques to achiev

 0.3. Size:116K  international rectifier
irlr014n irlu014n.pdf

IRLR014 IRLR014

PD- 94350IRLR/U014NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.14G Fast Switching Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance

 0.4. Size:203K  international rectifier
auirlr014n.pdf

IRLR014 IRLR014

AUTOMOTIVE GRADEPD - 97740AUIRLR014N Advanced Planar Technology Logic-Level Gate DriveHEXFET Power MOSFET Low On-ResistanceD Dynamic dV/dT RatingV(BR)DSS55V 175C Operating Temperature Fast SwitchingRDS(on) max.0.14G Fully Avalanche Rated Repetitive Avalanche Allowed up to TjmaxID 10AS Lead-Free, RoHS Compliant Auto

 0.5. Size:110K  international rectifier
irlr014n.pdf

IRLR014 IRLR014

PD- 94350IRLR/U014NHEXFET Power MOSFET Logic-Level Gate DriveD Surface Mount (IRLR024N) VDSS = 55V Straight Lead (IRLU024N) Advanced Process TechnologyRDS(on) = 0.14G Fast Switching Fully Avalanche RatedID = 10ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve the lowest possible on-resistance

 0.6. Size:214K  samsung
irlr014a.pdf

IRLR014 IRLR014

IRLR/U014AAdvanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.155 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.2 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAK Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.122 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum Ra

 0.7. Size:268K  cn vbsemi
irlr014ntrp.pdf

IRLR014 IRLR014

IRLR014NTRPwww.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters M

 0.8. Size:256K  inchange semiconductor
irlr014a.pdf

IRLR014 IRLR014

Isc N-Channel MOSFET Transistor IRLR014AFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

Datasheet: IRLMS1503 , IRLMS1902 , IRLMS2002 , IRLMS4502 , IRLMS5703 , IRLMS6702 , IRLMS6802 , IRLR010 , 18N50 , IRLR014A , IRLR020 , IRLR024 , IRLR024A , IRLR024N , IRLR110A , IRLR120A , IRLR120N .

 

 
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