SSM90T03GJ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM90T03GJ  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 96 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 83 nS

Cossⓘ - Capacitancia de salida: 1010 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: TO-251

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SSM90T03GJ datasheet

 ..1. Size:287K  silicon standard
 ssm90t03gh ssm90t03gj.pdf pdf_icon

SSM90T03GJ

SSM90T03GH,J N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 30V D Simple drive requirement R 4m DS(ON) Fast switching ID 75A G Pb-free; RoHS compliant. S DESCRIPTION G The SSM90T03GH is in a TO-252 package, which is widely used for D S TO-252 (H) commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC

 5.1. Size:289K  silicon standard
 ssm90t03gp ssm90t03gs.pdf pdf_icon

SSM90T03GJ

SSM90T03GP,S N-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 30V D Simple drive requirement RDS(ON) 4m Fast switching I 75A D G Pb-free, RoHS compliant. S DESCRIPTION G D The SSM90T03GS is in a TO-263 package, which is widely used for S TO-263 (S) commercial and industrial surface mount applications. This device is suitable for low voltage applications such

Otros transistores... SSM72T02GH, SSM75T10GP, SSM75T10GS, SSM7811GM, SSM85T03GH, SSM85T03GJ, SSM85T08GP, SSM90T03GH, K4145, SSM90T03GP, SSM90T03GS, SSM9406GM, SSM9408GH, SSM9410GM, SSM9435GH, SSM9435GJ, SSM9435GM