SSM90T03GJ MOSFET. Datasheet pdf. Equivalent
Type Designator: SSM90T03GJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 75 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 1010 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-251
SSM90T03GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSM90T03GJ Datasheet (PDF)
ssm90t03gh ssm90t03gj.pdf
SSM90T03GH,JN-channel Enhancement-mode Power MOSFETLow gate-charge BVDSS 30VDSimple drive requirement R 4mDS(ON)Fast switching ID 75AGPb-free; RoHS compliant.SDESCRIPTIONGThe SSM90T03GH is in a TO-252 package, which is widely used for DSTO-252 (H)commercial and industrial surface mount applications, and is well suitedfor low voltage applications such as DC/DC
ssm90t03gp ssm90t03gs.pdf
SSM90T03GP,SN-channel Enhancement-mode Power MOSFET Low gate-charge BVDSS 30VDSimple drive requirement RDS(ON) 4mFast switching I 75AD GPb-free, RoHS compliant.SDESCRIPTIONGDThe SSM90T03GS is in a TO-263 package, which is widely used forSTO-263 (S)commercial and industrial surface mount applications. This device is suitable for low voltage applications such
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