SSM9915GH Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSM9915GH  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 26 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 49.5 nS

Cossⓘ - Capacitancia de salida: 126 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: TO-252

  📄📄 Copiar 

 Búsqueda de reemplazo de SSM9915GH MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSM9915GH datasheet

 ..1. Size:300K  silicon standard
 ssm9915gh ssm9915gj.pdf pdf_icon

SSM9915GH

SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 20V D DSS Capable of 2.5V gate drive R 50m DS(ON) Low drive current I 20A D G Simple drive requirement S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effective

 7.1. Size:206K  silicon standard
 ssm9915k.pdf pdf_icon

SSM9915GH

SSM9915K N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement BVDSS 20V D Lower gate charge RDS(ON) 50m Fast switching characteristic ID 6.2A S D SOT-223 G Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G low on-resistance and cost-effectiveness. S Absolute Maximum Ratings Symbol Para

 8.1. Size:301K  silicon standard
 ssm9918gh ssm9918gj.pdf pdf_icon

SSM9915GH

SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 20V DSS D Capable of 2.5V gate drive R 14m DS(ON) Low drive current I 45A D G Surface mount package S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectivene

 8.2. Size:297K  silicon standard
 ssm9916gh ssm9916gj.pdf pdf_icon

SSM9915GH

SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 18V D DSS Capable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A G Simple drive requirement S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness

MOSTRAR MÁS

Otros transistores... SSM9575M, SSM9585GM, SSM9585GP, SSM95T06GP, SSM95T06GS, SSM95T07GP, SSM9620M, SSM9685M, SI2302, SSM9915GJ, SSM9915K, SSM9916GH, SSM9916GJ, SSM9918GH, SSM9918GJ, SSM9922GEO, SSM9926EM