SSM9915GH Todos los transistores

 

SSM9915GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSM9915GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 26 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 7.5 nC
   trⓘ - Tiempo de subida: 49.5 nS
   Cossⓘ - Capacitancia de salida: 126 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TO-252
 

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SSM9915GH Datasheet (PDF)

 ..1. Size:300K  silicon standard
 ssm9915gh ssm9915gj.pdf pdf_icon

SSM9915GH

SSM9915H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VD DSSCapable of 2.5V gate drive R 50mDS(ON)Low drive current I 20ADGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effective

 7.1. Size:206K  silicon standard
 ssm9915k.pdf pdf_icon

SSM9915GH

SSM9915KN-CHANNEL ENHANCEMENT MODE POWER MOSFETSimple drive requirement BVDSS 20VDLower gate charge RDS(ON) 50mFast switching characteristic ID 6.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Para

 8.1. Size:301K  silicon standard
 ssm9918gh ssm9918gj.pdf pdf_icon

SSM9915GH

SSM9918H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VDSSDCapable of 2.5V gate drive R 14mDS(ON)Low drive current I 45ADGSurface mount packageSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectivene

 8.2. Size:297K  silicon standard
 ssm9916gh ssm9916gj.pdf pdf_icon

SSM9915GH

SSM9916H,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BV 18VD DSSCapable of 2.5V gate drive RDS(ON) 25mLow drive current ID 35AGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness

MOSTRAR MÁS

Otros transistores... SSM9575M , SSM9585GM , SSM9585GP , SSM95T06GP , SSM95T06GS , SSM95T07GP , SSM9620M , SSM9685M , IRFZ46N , SSM9915GJ , SSM9915K , SSM9916GH , SSM9916GJ , SSM9918GH , SSM9918GJ , SSM9922GEO , SSM9926EM .

History: WSC40N06 | MTB090N06I3 | IRLU7843PBF | IRFR310 | MTB40P06Q8 | WSF09N20 | IRLTS2242

 

 
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