SSM9915GH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSM9915GH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 26 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 49.5 nS
Cossⓘ - Capacitancia de salida: 126 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Paquete / Cubierta: TO-252
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SSM9915GH Datasheet (PDF)
ssm9915gh ssm9915gj.pdf

SSM9915H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VD DSSCapable of 2.5V gate drive R 50mDS(ON)Low drive current I 20ADGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effective
ssm9915k.pdf

SSM9915KN-CHANNEL ENHANCEMENT MODE POWER MOSFETSimple drive requirement BVDSS 20VDLower gate charge RDS(ON) 50mFast switching characteristic ID 6.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Para
ssm9918gh ssm9918gj.pdf

SSM9918H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VDSSDCapable of 2.5V gate drive R 14mDS(ON)Low drive current I 45ADGSurface mount packageSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectivene
ssm9916gh ssm9916gj.pdf

SSM9916H,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BV 18VD DSSCapable of 2.5V gate drive RDS(ON) 25mLow drive current ID 35AGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness
Otros transistores... SSM9575M , SSM9585GM , SSM9585GP , SSM95T06GP , SSM95T06GS , SSM95T07GP , SSM9620M , SSM9685M , IRFZ46N , SSM9915GJ , SSM9915K , SSM9916GH , SSM9916GJ , SSM9918GH , SSM9918GJ , SSM9922GEO , SSM9926EM .
History: 2SK1493 | STB120NH03L | NCE1826K | NDS0610 | MTB050P10F3 | MTB050P10E3
History: 2SK1493 | STB120NH03L | NCE1826K | NDS0610 | MTB050P10F3 | MTB050P10E3



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