SSM9915GH - Даташиты. Аналоги. Основные параметры
Наименование производителя: SSM9915GH
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 26 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 49.5 ns
Cossⓘ - Выходная емкость: 126 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.05 Ohm
Тип корпуса: TO-252
Аналог (замена) для SSM9915GH
SSM9915GH Datasheet (PDF)
ssm9915gh ssm9915gj.pdf
SSM9915H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VD DSSCapable of 2.5V gate drive R 50mDS(ON)Low drive current I 20ADGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effective
ssm9915k.pdf
SSM9915KN-CHANNEL ENHANCEMENT MODE POWER MOSFETSimple drive requirement BVDSS 20VDLower gate charge RDS(ON) 50mFast switching characteristic ID 6.2ASDSOT-223GDescriptionDAdvanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G low on-resistance and cost-effectiveness.SAbsolute Maximum RatingsSymbol Para
ssm9918gh ssm9918gj.pdf
SSM9918H,JN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETLow on-resistance BV 20VDSSDCapable of 2.5V gate drive R 14mDS(ON)Low drive current I 45ADGSurface mount packageSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectivene
ssm9916gh ssm9916gj.pdf
SSM9916H,JN-CHANNEL ENHANCEMENT-MODE POWER MOSFETLow on-resistance BV 18VD DSSCapable of 2.5V gate drive RDS(ON) 25mLow drive current ID 35AGSimple drive requirementSDescriptionGPower MOSFETs from Silicon Standard provide theDSTO-252(H)designer with the best combination of fast switching,ruggedized device design, ultra low on-resistance andcost-effectiveness
Другие MOSFET... SSM9575M , SSM9585GM , SSM9585GP , SSM95T06GP , SSM95T06GS , SSM95T07GP , SSM9620M , SSM9685M , SI2302 , SSM9915GJ , SSM9915K , SSM9916GH , SSM9916GJ , SSM9918GH , SSM9918GJ , SSM9922GEO , SSM9926EM .
History: NCE70N900K | HY4008PM | SVF8N65RDTR | RU6050L | HY4008PS | IRF1010H | FQB3P50TM
History: NCE70N900K | HY4008PM | SVF8N65RDTR | RU6050L | HY4008PS | IRF1010H | FQB3P50TM
Список транзисторов
Обновления
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