SSM9915GH Datasheet. Specs and Replacement

Type Designator: SSM9915GH  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49.5 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-252

SSM9915GH substitution

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SSM9915GH datasheet

 ..1. Size:300K  silicon standard
ssm9915gh ssm9915gj.pdf pdf_icon

SSM9915GH

SSM9915H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 20V D DSS Capable of 2.5V gate drive R 50m DS(ON) Low drive current I 20A D G Simple drive requirement S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effective... See More ⇒

 7.1. Size:206K  silicon standard
ssm9915k.pdf pdf_icon

SSM9915GH

SSM9915K N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple drive requirement BVDSS 20V D Lower gate charge RDS(ON) 50m Fast switching characteristic ID 6.2A S D SOT-223 G Description D Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G low on-resistance and cost-effectiveness. S Absolute Maximum Ratings Symbol Para... See More ⇒

 8.1. Size:301K  silicon standard
ssm9918gh ssm9918gj.pdf pdf_icon

SSM9915GH

SSM9918H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 20V DSS D Capable of 2.5V gate drive R 14m DS(ON) Low drive current I 45A D G Surface mount package S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectivene... See More ⇒

 8.2. Size:297K  silicon standard
ssm9916gh ssm9916gj.pdf pdf_icon

SSM9915GH

SSM9916H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Low on-resistance BV 18V D DSS Capable of 2.5V gate drive RDS(ON) 25m Low drive current ID 35A G Simple drive requirement S Description G Power MOSFETs from Silicon Standard provide the D S TO-252(H) designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness... See More ⇒

Detailed specifications: SSM9575M, SSM9585GM, SSM9585GP, SSM95T06GP, SSM95T06GS, SSM95T07GP, SSM9620M, SSM9685M, SI2302, SSM9915GJ, SSM9915K, SSM9916GH, SSM9916GJ, SSM9918GH, SSM9918GJ, SSM9922GEO, SSM9926EM

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