SSP45N20B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSP45N20B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 176 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 35 V
|Id|ⓘ - Corriente continua de drenaje: 35 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 340 nS
Cossⓘ - Capacitancia de salida: 460 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de SSP45N20B MOSFET
SSP45N20B Datasheet (PDF)
ssp45n20b.pdf

November 2001SSP45N20B/SSS45N20B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 133 nC)planar, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored
ssp45n20b sss45n20b.pdf

November 2001SSP45N20B/SSS45N20B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 133 nC)planar, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especially tailored
ssp45n20a.pdf

Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input CapacitanceID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.054 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
Otros transistores... SSM9980GJ , SSM9980M , SSM9985GM , SSM9987GH , SSM9987GM , SSN1N45BBU , SSN1N45BTA , SSP3N90 , IRFP260N , SSP4N60B , SSP4N80 , SSP5N90 , SSR1N45 , SSR1N60B , SSR1N60BTM , SSR2N60B , SSRK7002LT1G .
History: HMS80N10AL | AFP8833 | SRADM1005 | FQB19N10LTM | UF3205L-T3P-T | NCE65T1K2
History: HMS80N10AL | AFP8833 | SRADM1005 | FQB19N10LTM | UF3205L-T3P-T | NCE65T1K2



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