SSP45N20B Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSP45N20B  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 176 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 35 V

|Id|ⓘ - Corriente continua de drenaje: 35 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 340 nS

Cossⓘ - Capacitancia de salida: 460 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm

Encapsulados: TO-220

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SSP45N20B datasheet

 ..1. Size:912K  fairchild semi
 ssp45n20b.pdf pdf_icon

SSP45N20B

November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 133 nC) planar, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored

 ..2. Size:914K  fairchild semi
 ssp45n20b sss45n20b.pdf pdf_icon

SSP45N20B

November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 133 nC) planar, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored

 6.1. Size:818K  samsung
 ssp45n20a.pdf pdf_icon

SSP45N20B

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input Capacitance ID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

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