SSP45N20B Datasheet. Specs and Replacement
Type Designator: SSP45N20B 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 35 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 340 nS
Cossⓘ - Output Capacitance: 460 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: TO-220
SSP45N20B substitution
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SSP45N20B datasheet
ssp45n20b.pdf
November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 133 nC) planar, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒
ssp45n20b sss45n20b.pdf
November 2001 SSP45N20B/SSS45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 35A, 200V, RDS(on) = 0.065 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 133 nC) planar, DMOS technology. Low Crss ( typical 120 pF) This advanced technology has been especially tailored ... See More ⇒
ssp45n20a.pdf
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.065 Rugged Gate Oxide Technology Lower Input Capacitance ID = 35 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 200V Low RDS(ON) 0.054 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V... See More ⇒
Detailed specifications: SSM9980GJ, SSM9980M, SSM9985GM, SSM9987GH, SSM9987GM, SSN1N45BBU, SSN1N45BTA, SSP3N90, IRLZ44N, SSP4N60B, SSP4N80, SSP5N90, SSR1N45, SSR1N60B, SSR1N60BTM, SSR2N60B, SSRK7002LT1G
Keywords - SSP45N20B MOSFET specs
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