AFC4559 Datasheet. Equivalente

 ..1. Size:919K  alfa-mos
 afc4559.pdf

AFC4559 Alfa-MOS 60V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 60V/6.8A,RDS(ON)= 42m @VGS=10V to provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)= 50m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 9.1. Size:885K  alfa-mos
 afc4539ws.pdf

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 9.2. Size:988K  alfa-mos
 afc4599.pdf

AFC4599 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m @VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 36m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 9.3. Size:802K  alfa-mos
 afc4510s.pdf

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m @VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m @VGS=4.5V These devices are particularly suited for low P-Channel voltage p

 9.4. Size:810K  alfa-mos
 afc4516w.pdf

AFC4516W Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 9.5. Size:810K  alfa-mos
 afc4516.pdf

AFC4516 Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=15m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power manage

 9.6. Size:885K  alfa-mos
 afc4539s.pdf

AFC4539S Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=40m @VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m @VGS=4.5V These devices are particularly suited for low P-Channel voltage power ma