AFC4559 Todos los transistores

 

AFC4559 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFC4559
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 85 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: SOP-8P
 

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AFC4559 Datasheet (PDF)

 ..1. Size:919K  alfa-mos
 afc4559.pdf pdf_icon

AFC4559

AFC4559 Alfa-MOS 60V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 60V/6.8A,RDS(ON)= 42m@VGS=10V to provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)= 50m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 9.1. Size:885K  alfa-mos
 afc4539ws.pdf pdf_icon

AFC4559

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 9.2. Size:988K  alfa-mos
 afc4599.pdf pdf_icon

AFC4559

AFC4599 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 36m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 9.3. Size:802K  alfa-mos
 afc4510s.pdf pdf_icon

AFC4559

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m@VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m@VGS=4.5V These devices are particularly suited for low P-Channel voltage p

MOSTRAR MÁS

Otros transistores... AFC3326WS , AFC3346W , AFC3366W , AFC4510S , AFC4516 , AFC4516W , AFC4539S , AFC4539WS , IRFP250 , AFC4599 , AFC4604W , AFC5521 , AFC5604 , AFC5606 , AFC6332 , AFC6601 , AFC6602 .

History: SI7682DP | GP2M002A060XG

 

 
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