All MOSFET. AFC4559 Datasheet

 

AFC4559 Datasheet and Replacement


   Type Designator: AFC4559
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: SOP-8P
 

 AFC4559 substitution

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AFC4559 Datasheet (PDF)

 ..1. Size:919K  alfa-mos
 afc4559.pdf pdf_icon

AFC4559

AFC4559 Alfa-MOS 60V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 60V/6.8A,RDS(ON)= 42m@VGS=10V to provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)= 50m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 9.1. Size:885K  alfa-mos
 afc4539ws.pdf pdf_icon

AFC4559

AFC4539WS Alfa-MOS 30V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 30V/5.8A,RDS(ON)=36m@VGS=10V to provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power

 9.2. Size:988K  alfa-mos
 afc4599.pdf pdf_icon

AFC4559

AFC4599 Alfa-MOS 40V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 40V/8A,RDS(ON)= 22m@VGS=10V to provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)= 36m@VGS=4.5V These devices are particularly suited for low P-Channel voltage power mana

 9.3. Size:802K  alfa-mos
 afc4510s.pdf pdf_icon

AFC4559

AFC4510S Alfa-MOS 100V N & P Pair Technology Enhancement Mode MOSFET General Description Features AFC4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=140m@VGS=10V to provide excellent RDS(ON), low gate charge. 100V/2.0A,RDS(ON)=150m@VGS=4.5V These devices are particularly suited for low P-Channel voltage p

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Datasheet: AFC3326WS , AFC3346W , AFC3366W , AFC4510S , AFC4516 , AFC4516W , AFC4539S , AFC4539WS , AON7506 , AFC4599 , AFC4604W , AFC5521 , AFC5604 , AFC5606 , AFC6332 , AFC6601 , AFC6602 .

History: FRK254D | STL16N60M2 | STL160NS3LLH7 | AP18T10AGK-HF | 2SJ166 | SQ3461EV | AONR32340C

Keywords - AFC4559 MOSFET datasheet

 AFC4559 cross reference
 AFC4559 equivalent finder
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