AFN1034 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFN1034
   Código: N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 0.27 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 0.7 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 1.4 nC
   Tiempo de subida (tr): 25 nS
   Conductancia de drenaje-sustrato (Cd): 25 pF
   Resistencia entre drenaje y fuente RDS(on): 0.44 Ohm
   Paquete / Cubierta: SOT-563

Búsqueda de reemplazo de MOSFET AFN1034

AFN1034 Datasheet (PDF)

..1. Size:583K alfa-mos
afn1034.pdf

AFN1034 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=720m@VGS=1.8V These devices are particularly suited for low L

8.1. Size:560K alfa-mos
afn1032.pdf

AFN1032 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low L

9.1. Size:608K alfa-mos
afn1024.pdf

AFN1024 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

9.2. Size:672K alfa-mos
afn1072.pdf

AFN1072 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.7A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

9.3. Size:605K alfa-mos
afn1024e.pdf

AFN1024E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low

9.4. Size:587K alfa-mos
afn1012e.pdf

AFN1012E Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1012E, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low

9.5. Size:486K alfa-mos
afn10n60t220ft afn10n60t220t.pdf

AFN10N60 Alfa-MOS 600V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N60 is an N-channel enhancement mode Power 600V/5A,RDS(ON)=1(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

9.6. Size:585K alfa-mos
afn1012.pdf

AFN1012 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1012, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

9.7. Size:526K alfa-mos
afn10n65t220ft afn10n65t220t.pdf

AFN10N65 Alfa-MOS 650V / 10A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN10N65 is an N-channel enhancement mode Power 650V/5A,RDS(ON)=1(MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

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