Справочник MOSFET. AFN1034

 

AFN1034 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AFN1034
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.27 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 25 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.44 Ohm
   Тип корпуса: SOT-563
 

 Аналог (замена) для AFN1034

   - подбор ⓘ MOSFET транзистора по параметрам

 

AFN1034 Datasheet (PDF)

 ..1. Size:583K  alfa-mos
afn1034.pdfpdf_icon

AFN1034

AFN1034 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=720m@VGS=1.8V These devices are particularly suited for low L

 8.1. Size:560K  alfa-mos
afn1032.pdfpdf_icon

AFN1034

AFN1032 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m@VGS=1.8V These devices are particularly suited for low L

 9.1. Size:608K  alfa-mos
afn1024.pdfpdf_icon

AFN1034

AFN1024 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

 9.2. Size:672K  alfa-mos
afn1072.pdfpdf_icon

AFN1034

AFN1072 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.7A,RDS(ON)=420m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m@VGS=1.8V These devices are particularly suited for low L

Другие MOSFET... AFN07N65T220T , AFN08N50T220FT , AFN08N50T220T , AFN1012 , AFN1012E , AFN1024 , AFN1024E , AFN1032 , NCEP15T14 , AFN1072 , AFN10N60T220FT , AFN10N60T220T , AFN10N65T220FT , AFN10N65T220T , AFN12N60T220FT , AFN12N60T220T , AFN12N65T220FT .

History: DMP2035UFDF | AP10P10GJ | 2SK2690-01

 

 
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