AFN1034 Datasheet. Specs and Replacement

Type Designator: AFN1034  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: SOT-563

AFN1034 substitution

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AFN1034 datasheet

 ..1. Size:583K  alfa-mos
 afn1034.pdf pdf_icon

AFN1034

AFN1034 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1034, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=720m @VGS=1.8V These devices are particularly suited for low L... See More ⇒

 8.1. Size:560K  alfa-mos
 afn1032.pdf pdf_icon

AFN1034

AFN1032 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1032, N-Channel enhancement mode 30V/0.6A,RDS(ON)=440m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/0.5A,RDS(ON)=500m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 30V/0.4A,RDS(ON)=750m @VGS=1.8V These devices are particularly suited for low L... See More ⇒

 9.1. Size:608K  alfa-mos
 afn1024.pdf pdf_icon

AFN1034

AFN1024 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1024, N-Channel enhancement mode 20V/0.6A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.5A,RDS(ON)=420m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.4A,RDS(ON)=560m @VGS=1.8V These devices are particularly suited for low L... See More ⇒

 9.2. Size:672K  alfa-mos
 afn1072.pdf pdf_icon

AFN1034

AFN1072 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1072, N-Channel enhancement mode 20V/0.8A,RDS(ON)=360m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/0.7A,RDS(ON)=420m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/0.6A,RDS(ON)=560m @VGS=1.8V These devices are particularly suited for low L... See More ⇒

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Detailed specifications: AFN07N65T220T, AFN08N50T220FT, AFN08N50T220T, AFN1012, AFN1012E, AFN1024, AFN1024E, AFN1032, IRF1405, AFN1072, AFN10N60T220FT, AFN10N60T220T, AFN10N65T220FT, AFN10N65T220T, AFN12N60T220FT, AFN12N60T220T, AFN12N65T220FT

Keywords - AFN1034 MOSFET specs

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