AFN1510S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFN1510S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 30 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: TO-220

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AFN1510S Datasheet (PDF)

..1. Size:575K alfa-mos
afn1510s.pdf

AFN1510S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1510S, N-Channel enhancement mode 100V/25A,RDS(ON)= 46m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/20A,RDS(ON)= 52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

9.1. Size:658K alfa-mos
afn1501s.pdf

AFN1501S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1501S, N-Channel enhancement mode 100V/60A,RDS(ON)= 6.4m@VGS=10V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely low provide excellent RDS(ON), low gate charge. RDS (ON) These devices are particularly suited for low voltage TO-220-

9.2. Size:574K alfa-mos
afn1530.pdf

AFN1530 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1530, N-Channel enhancement mode 100V/15A,RDS(ON)= 115m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/12A,RDS(ON)= 125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

9.3. Size:574K alfa-mos
afn1520.pdf

AFN1520 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1520, N-Channel enhancement mode 100V/4.0A,RDS(ON)= 320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.0A,RDS(ON)= 340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited

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