AFN1510S MOSFET PDF: N-Ch, 100V, 35A. Full specification with pinout and replacement list

AFN1510S PDF Specs and Replacement

   Type Designator: AFN1510S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO-220

AFN1510S substitution

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AFN1510S PDF Specs

..1. Size:575K alfa-mos
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AFN1510S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1510S, N-Channel enhancement mode 100V/25A,RDS(ON)= 46m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/20A,RDS(ON)= 52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f... See More ⇒

9.1. Size:658K alfa-mos
afn1501s.pdf pdf_icon

AFN1501S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1501S, N-Channel enhancement mode 100V/60A,RDS(ON)= 6.4m @VGS=10V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely low provide excellent RDS(ON), low gate charge. RDS (ON) These devices are particularly suited for low voltage TO-220-... See More ⇒

9.2. Size:574K alfa-mos
afn1530.pdf pdf_icon

AFN1530 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1530, N-Channel enhancement mode 100V/15A,RDS(ON)= 115m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/12A,RDS(ON)= 125m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f... See More ⇒

9.3. Size:574K alfa-mos
afn1520.pdf pdf_icon

AFN1520 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1520, N-Channel enhancement mode 100V/4.0A,RDS(ON)= 320m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.0A,RDS(ON)= 340m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited... See More ⇒

Detailed specifications: AFN12N65T220FT , AFN12N65T220T , AFN1304 , AFN1304E , AFN1306 , AFN1330S , AFN1443 , AFN1501S , IRFP064N , AFN1520 , AFN1530 , AFN1912 , AFN1912E , AFN1932 , AFN2014 , AFN2302AS , AFN2302S .