Справочник MOSFET. AFN1510S

 

AFN1510S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AFN1510S
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 250 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.046 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для AFN1510S

 

 

AFN1510S Datasheet (PDF)

 ..1. Size:575K  alfa-mos
 afn1510s.pdf

AFN1510S AFN1510S

AFN1510S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1510S, N-Channel enhancement mode 100V/25A,RDS(ON)= 46m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/20A,RDS(ON)= 52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

 9.1. Size:658K  alfa-mos
 afn1501s.pdf

AFN1510S AFN1510S

AFN1501S Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1501S, N-Channel enhancement mode 100V/60A,RDS(ON)= 6.4m@VGS=10V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely low provide excellent RDS(ON), low gate charge. RDS (ON) These devices are particularly suited for low voltage TO-220-

 9.2. Size:574K  alfa-mos
 afn1530.pdf

AFN1510S AFN1510S

AFN1530 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1530, N-Channel enhancement mode 100V/15A,RDS(ON)= 115m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/12A,RDS(ON)= 125m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited f

 9.3. Size:574K  alfa-mos
 afn1520.pdf

AFN1510S AFN1510S

AFN1520 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN1520, N-Channel enhancement mode 100V/4.0A,RDS(ON)= 320m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/4.0A,RDS(ON)= 340m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low These devices are particularly suited

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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