IRLS510A MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: IRLS510A

..1. Size:889K samsung
irls510a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin

9.1. Size:892K samsung
irls520a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 7.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum

9.2. Size:945K samsung
irls530a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.101 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

9.3. Size:938K samsung
irls540a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.046 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating

Otros transistores... IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , IRLR2905 , IRLR3103 , IRLR3303 , IRLR3410 , STF13NM60N , IRLS520A , IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A , IRLSZ14A .