IRLS510A MOSFET Datasheet: N-Ch, 100V, 4.5A. Full specification with pinout and replacement list

IRLS510A Specs and Replacement

Type Designator: IRLS510A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.44 Ohm

Package: TO220F

IRLS510A substitution

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IRLS510A datasheet

..1. Size:889K samsung
irls510a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.44 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 4.5 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.336 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin... See More ⇒

9.1. Size:892K samsung
irls520a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.22 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 7.2 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.176 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum... See More ⇒

9.2. Size:945K samsung
irls530a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.12 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 10.7 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.101 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings... See More ⇒

9.3. Size:938K samsung
irls540a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 100 V Logic Level Gate Drive RDS(on) = 0.058 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 17 A Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 100V Lower RDS(ON) 0.046 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Rating... See More ⇒

Detailed specifications: IRLR220A , IRLR230A , IRLR2703 , IRLR2705 , IRLR2905 , IRLR3103 , IRLR3303 , IRLR3410 , STF13NM60N , IRLS520A , IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A , IRLSZ14A .