AFN3030 Datasheet. Equivalente

 ..1. Size:833K  alfa-mos
 afn3030.pdf

AFN3030 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3030, N-Channel enhancement mode 30V/12A,RDS(ON)= 30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)= 40m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:853K  alfa-mos
 afn3019s.pdf

AFN3019S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=13m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

 9.2. Size:863K  alfa-mos
 afn3006s.pdf

AFN3006S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3006S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.3. Size:823K  alfa-mos
 afn3009s.pdf

AFN3009S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=11.5m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f

 9.4. Size:772K  alfa-mos
 afn3025s.pdf

AFN3025S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3025S, N-Channel enhancement mode 30V/9.0A,RDS(ON)=32m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/7.0A,RDS(ON)=36m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/5.0A,RDS(ON)=42m @VGS=2.5V These devices are particularly suited for low Sup

 9.5. Size:863K  alfa-mos
 afn3015s.pdf

AFN3015S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3015S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.1m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.8m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.6. Size:824K  alfa-mos
 afn3016s.pdf

AFN3016S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3016S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo