AFN3030 Datasheet. Specs and Replacement

Type Designator: AFN3030  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-252

AFN3030 substitution

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AFN3030 datasheet

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AFN3030

AFN3030 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3030, N-Channel enhancement mode 30V/12A,RDS(ON)= 30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)= 40m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 9.1. Size:853K  alfa-mos
 afn3019s.pdf pdf_icon

AFN3030

AFN3019S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3019S, N-Channel enhancement mode 30V/35A,RDS(ON)=9m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=13m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l... See More ⇒

 9.2. Size:863K  alfa-mos
 afn3006s.pdf pdf_icon

AFN3030

AFN3006S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3006S, N-Channel enhancement mode 30V/45A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=9m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

 9.3. Size:823K  alfa-mos
 afn3009s.pdf pdf_icon

AFN3030

AFN3009S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3009S, N-Channel enhancement mode 30V/35A,RDS(ON)=8.5m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=11.5m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited f... See More ⇒

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Detailed specifications: AFN2604, AFN2912W, AFN3006S, AFN3009S, AFN3015S, AFN3016S, AFN3019S, AFN3025S, IRF9540N, AFN3302W, AFN3306WS, AFN3309WS, AFN3310W, AFN3316W, AFN3400, AFN3400A, AFN3400AS

Keywords - AFN3030 MOSFET specs

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