AFN3316W MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN3316W
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 17 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 6 nC
Tiempo de subida (tr): 6 nS
Conductancia de drenaje-sustrato (Cd): 30 pF
Resistencia entre drenaje y fuente RDS(on): 0.14 Ohm
Paquete / Cubierta: DFN3X3
Búsqueda de reemplazo de MOSFET AFN3316W
AFN3316W Datasheet (PDF)
afn3316w.pdf
AFN3316W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/6A,RDS(ON)=148m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3310w.pdf
AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3309ws.pdf
AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3306ws.pdf
AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited
afn3302w.pdf
AFN3302W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/12A,RDS(ON)=18m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V These devices are particularly suited for low Super
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