AFN3316W Datasheet. Specs and Replacement
Type Designator: AFN3316W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 17 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: DFN3X3
AFN3316W substitution
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AFN3316W datasheet
afn3316w.pdf
AFN3316W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/6A,RDS(ON)=148m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒
afn3310w.pdf
AFN3310W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/10A,RDS(ON)=19m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒
afn3309ws.pdf
AFN3309WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=11m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for... See More ⇒
afn3306ws.pdf
AFN3306WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=7.4m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒
Detailed specifications: AFN3016S, AFN3019S, AFN3025S, AFN3030, AFN3302W, AFN3306WS, AFN3309WS, AFN3310W, IRFP260, AFN3400, AFN3400A, AFN3400AS, AFN3400S, AFN3402, AFN3402A, AFN3404, AFN3406
Keywords - AFN3316W MOSFET specs
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