AFN3410 Todos los transistores

 

AFN3410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN3410
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
   Paquete / Cubierta: TSOP-6
 

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AFN3410 Datasheet (PDF)

 ..1. Size:574K  alfa-mos
 afn3410.pdf pdf_icon

AFN3410

AFN3410 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.5A,RDS(ON)=30m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:568K  alfa-mos
 afn3414.pdf pdf_icon

AFN3410

AFN3414 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414, N-Channel enhancement mode 20V/3.6A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=68m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=88m@VGS=1.8V These devices are particularly suited for low Supe

 8.2. Size:554K  alfa-mos
 afn3416.pdf pdf_icon

AFN3410

AFN3416 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3416, N-Channel enhancement mode 20V/4.0A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=30m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m@VGS=1.8V These devices are particularly suited for low Supe

 8.3. Size:700K  alfa-mos
 afn3414a.pdf pdf_icon

AFN3410

AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=80m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low S

MOSTRAR MÁS

Otros transistores... AFN3400S , AFN3402 , AFN3402A , AFN3404 , AFN3406 , AFN3406A , AFN3406AS , AFN3406S , AO4407 , AFN3414 , AFN3414A , AFN3414S , AFN3416 , AFN3424 , AFN3424A , AFN3426 , AFN3430W .

History: PDC3908X | 2N06L09P | KRF7309 | 4N80G-TN3-R | BLP05N08G-P | FQB9N50TM | SRC65R042B

 

 
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