AFN3410 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN3410
Código: 10*
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 6 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.8 V
Carga de la puerta (Qg): 8 nC
Tiempo de subida (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 180 pF
Resistencia entre drenaje y fuente RDS(on): 0.027 Ohm
Paquete / Cubierta: TSOP-6
Búsqueda de reemplazo de MOSFET AFN3410
AFN3410 Datasheet (PDF)
afn3410.pdf
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AFN3410 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.5A,RDS(ON)=30m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
afn3414.pdf
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AFN3414 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414, N-Channel enhancement mode 20V/3.6A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=68m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=88m@VGS=1.8V These devices are particularly suited for low Supe
afn3416.pdf
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AFN3416 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3416, N-Channel enhancement mode 20V/4.0A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=30m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m@VGS=1.8V These devices are particularly suited for low Supe
afn3414a.pdf
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AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=80m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low S
afn3414s.pdf
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AFN3414S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.4A,RDS(ON)=60m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m@VGS=1.8V These devices are particularly suited for low S
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