AFN3410 Datasheet. Specs and Replacement

Type Designator: AFN3410  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm

Package: TSOP-6

AFN3410 substitution

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AFN3410 datasheet

 ..1. Size:574K  alfa-mos
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AFN3410

AFN3410 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.5A,RDS(ON)=30m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 8.1. Size:568K  alfa-mos
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AFN3410

AFN3414 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414, N-Channel enhancement mode 20V/3.6A,RDS(ON)=58m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=68m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=88m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

 8.2. Size:554K  alfa-mos
 afn3416.pdf pdf_icon

AFN3410

AFN3416 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3416, N-Channel enhancement mode 20V/4.0A,RDS(ON)=26m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=30m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

 8.3. Size:700K  alfa-mos
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AFN3410

AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=80m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m @VGS=1.8V These devices are particularly suited for low S... See More ⇒

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Detailed specifications: AFN3400S, AFN3402, AFN3402A, AFN3404, AFN3406, AFN3406A, AFN3406AS, AFN3406S, IRF530, AFN3414, AFN3414A, AFN3414S, AFN3416, AFN3424, AFN3424A, AFN3426, AFN3430W

Keywords - AFN3410 MOSFET specs

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