All MOSFET. AFN3410 Datasheet

 

AFN3410 Datasheet and Replacement


   Type Designator: AFN3410
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSOP-6
 

 AFN3410 substitution

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AFN3410 Datasheet (PDF)

 ..1. Size:574K  alfa-mos
 afn3410.pdf pdf_icon

AFN3410

AFN3410 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.5A,RDS(ON)=30m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:568K  alfa-mos
 afn3414.pdf pdf_icon

AFN3410

AFN3414 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414, N-Channel enhancement mode 20V/3.6A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=68m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=88m@VGS=1.8V These devices are particularly suited for low Supe

 8.2. Size:554K  alfa-mos
 afn3416.pdf pdf_icon

AFN3410

AFN3416 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3416, N-Channel enhancement mode 20V/4.0A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=30m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m@VGS=1.8V These devices are particularly suited for low Supe

 8.3. Size:700K  alfa-mos
 afn3414a.pdf pdf_icon

AFN3410

AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=80m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low S

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Datasheet: AFN3400S , AFN3402 , AFN3402A , AFN3404 , AFN3406 , AFN3406A , AFN3406AS , AFN3406S , AO4407 , AFN3414 , AFN3414A , AFN3414S , AFN3416 , AFN3424 , AFN3424A , AFN3426 , AFN3430W .

History: BUZ73AL | MP4N150 | SSM3K329R | PMPB12UNEA

Keywords - AFN3410 MOSFET datasheet

 AFN3410 cross reference
 AFN3410 equivalent finder
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