AFN3414 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFN3414
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: SOT-23

Búsqueda de reemplazo de MOSFET AFN3414

AFN3414 Datasheet (PDF)

..1. Size:568K alfa-mos
afn3414.pdf

AFN3414 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414, N-Channel enhancement mode 20V/3.6A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=68m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=88m@VGS=1.8V These devices are particularly suited for low Supe

0.1. Size:700K alfa-mos
afn3414a.pdf

AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=80m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low S

0.2. Size:521K alfa-mos
afn3414s.pdf

AFN3414S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.4A,RDS(ON)=60m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m@VGS=1.8V These devices are particularly suited for low S

8.1. Size:554K alfa-mos
afn3416.pdf

AFN3416 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3416, N-Channel enhancement mode 20V/4.0A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=30m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m@VGS=1.8V These devices are particularly suited for low Supe

8.2. Size:574K alfa-mos
afn3410.pdf

AFN3410 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/4.5A,RDS(ON)=30m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: