All MOSFET. AFN3414 Datasheet

 

AFN3414 Datasheet and Replacement


   Type Designator: AFN3414
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOT-23
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AFN3414 Datasheet (PDF)

 ..1. Size:568K  alfa-mos
 afn3414.pdf pdf_icon

AFN3414

AFN3414 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414, N-Channel enhancement mode 20V/3.6A,RDS(ON)=58m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=68m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=88m@VGS=1.8V These devices are particularly suited for low Supe

 0.1. Size:700K  alfa-mos
 afn3414a.pdf pdf_icon

AFN3414

AFN3414A Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/2.0A,RDS(ON)=80m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m@VGS=1.8V These devices are particularly suited for low S

 0.2. Size:521K  alfa-mos
 afn3414s.pdf pdf_icon

AFN3414

AFN3414S Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.4A,RDS(ON)=60m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m@VGS=1.8V These devices are particularly suited for low S

 8.1. Size:554K  alfa-mos
 afn3416.pdf pdf_icon

AFN3414

AFN3416 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3416, N-Channel enhancement mode 20V/4.0A,RDS(ON)=26m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/3.2A,RDS(ON)=30m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m@VGS=1.8V These devices are particularly suited for low Supe

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History: 2SK1571 | IRF7473

Keywords - AFN3414 MOSFET datasheet

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 AFN3414 equivalent finder
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