AFN3630 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN3630  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm

Encapsulados: TO-220

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AFN3630 datasheet

 ..1. Size:568K  alfa-mos
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AFN3630

AFN3630 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3630, N-Channel enhancement mode 30V/20A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=38m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.1. Size:559K  alfa-mos
 afn3609s.pdf pdf_icon

AFN3630

AFN3609S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3609S, N-Channel enhancement mode 30V/35A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=9m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:601K  alfa-mos
 afn3606s.pdf pdf_icon

AFN3630

AFN3606S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3606S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.0m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.5m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.3. Size:588K  alfa-mos
 afn3684s.pdf pdf_icon

AFN3630

AFN3684S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3684S, N-Channel enhancement mode 30V/30A,RDS(ON)=9m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=13m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l

MOSTRAR MÁS

Otros transistores... AFN3458, AFN3458BW, AFN3460, AFN3466, AFN3484, AFN3484S, AFN3606S, AFN3609S, 2N60, AFN3684S, AFN3806W, AFN3814W, AFN4048WS, AFN4102W, AFN4134, AFN4134W, AFN4172S