AFN3630 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFN3630
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 75 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 20 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4 nC
Время нарастания (tr): 10 ns
Выходная емкость (Cd): 80 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.03 Ohm
Тип корпуса: TO-220
AFN3630 Datasheet (PDF)
afn3630.pdf
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AFN3630 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3630, N-Channel enhancement mode 30V/20A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=38m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo
afn3609s.pdf
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AFN3609S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3609S, N-Channel enhancement mode 30V/35A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo
afn3606s.pdf
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AFN3606S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3606S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.0m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
afn3684s.pdf
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AFN3684S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3684S, N-Channel enhancement mode 30V/30A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![AFN3630](https://alltransistors.com/images/us.png)
![AFN3630](https://alltransistors.com/images/es.png)
![AFN3630](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C