AFN3630 Datasheet. Specs and Replacement

Type Designator: AFN3630  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-220

AFN3630 substitution

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AFN3630 datasheet

 ..1. Size:568K  alfa-mos
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AFN3630

AFN3630 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3630, N-Channel enhancement mode 30V/20A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=38m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

 9.1. Size:559K  alfa-mos
 afn3609s.pdf pdf_icon

AFN3630

AFN3609S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3609S, N-Channel enhancement mode 30V/35A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=9m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

 9.2. Size:601K  alfa-mos
 afn3606s.pdf pdf_icon

AFN3630

AFN3606S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3606S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.0m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.5m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

 9.3. Size:588K  alfa-mos
 afn3684s.pdf pdf_icon

AFN3630

AFN3684S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3684S, N-Channel enhancement mode 30V/30A,RDS(ON)=9m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=13m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l... See More ⇒

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Detailed specifications: AFN3458, AFN3458BW, AFN3460, AFN3466, AFN3484, AFN3484S, AFN3606S, AFN3609S, 2N60, AFN3684S, AFN3806W, AFN3814W, AFN4048WS, AFN4102W, AFN4134, AFN4134W, AFN4172S

Keywords - AFN3630 MOSFET specs

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