AFN3684S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN3684S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 200 pF
Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET AFN3684S
AFN3684S Datasheet (PDF)
afn3684s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AFN3684S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3684S, N-Channel enhancement mode 30V/30A,RDS(ON)=9m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=13m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l
afn3609s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AFN3609S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3609S, N-Channel enhancement mode 30V/35A,RDS(ON)=6m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=9m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo
afn3630.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AFN3630 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3630, N-Channel enhancement mode 30V/20A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=38m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo
afn3606s.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AFN3606S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3606S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.0m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.5m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
![AFN3684S](https://alltransistors.com/images/us.png)
![AFN3684S](https://alltransistors.com/images/es.png)
![AFN3684S](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C