AFN3684S MOSFET Datasheet: N-Ch, 30V, 30A. Full specification with pinout and replacement list

AFN3684S Specs and Replacement

   Type Designator: AFN3684S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-220

AFN3684S substitution

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AFN3684S datasheet

..1. Size:588K alfa-mos
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AFN3684S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3684S, N-Channel enhancement mode 30V/30A,RDS(ON)=9m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/18A,RDS(ON)=13m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for l... See More ⇒

9.1. Size:559K alfa-mos
afn3609s.pdf pdf_icon

AFN3609S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3609S, N-Channel enhancement mode 30V/35A,RDS(ON)=6m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/20A,RDS(ON)=9m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

9.2. Size:568K alfa-mos
afn3630.pdf pdf_icon

AFN3630 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3630, N-Channel enhancement mode 30V/20A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/15A,RDS(ON)=38m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

9.3. Size:601K alfa-mos
afn3606s.pdf pdf_icon

AFN3606S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN3606S, N-Channel enhancement mode 30V/45A,RDS(ON)=5.0m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/30A,RDS(ON)=6.5m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

Detailed specifications: AFN3458BW , AFN3460 , AFN3466 , AFN3484 , AFN3484S , AFN3606S , AFN3609S , AFN3630 , 8N60 , AFN3806W , AFN3814W , AFN4048WS , AFN4102W , AFN4134 , AFN4134W , AFN4172S , AFN4172WS .