AFN4248W Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN4248W  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 12 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SOP-8P

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AFN4248W datasheet

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AFN4248W

AFN4248W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4248W, N-Channel enhancement mode 20V/6.0A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/5.0A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/4.0A,RDS(ON)=42m @VGS=1.8V These devices are particularly suited for low Su

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 afn4228.pdf pdf_icon

AFN4248W

AFN4228 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4228, N-Channel enhancement mode 20V/ 8A,RDS(ON)=12m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 6A,RDS(ON)=15m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=20m @VGS=1.8V These devices are particularly suited for low Super h

 9.2. Size:483K  alfa-mos
 afn4214w.pdf pdf_icon

AFN4248W

AFN4214W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=18m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.3. Size:482K  alfa-mos
 afn4214.pdf pdf_icon

AFN4248W

AFN4214 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214, N-Channel enhancement mode 30V/9A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=20m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low

MOSTRAR MÁS

Otros transistores... AFN4134W, AFN4172S, AFN4172WS, AFN4210, AFN4210W, AFN4214, AFN4214W, AFN4228, AON7403, AFN4412, AFN4412W, AFN4422, AFN4424, AFN4424W, AFN4440, AFN4440W, AFN4486