AFN4248W Datasheet. Specs and Replacement

Type Designator: AFN4248W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP-8P

AFN4248W substitution

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AFN4248W datasheet

 ..1. Size:588K  alfa-mos
 afn4248w.pdf pdf_icon

AFN4248W

AFN4248W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4248W, N-Channel enhancement mode 20V/6.0A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/5.0A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/4.0A,RDS(ON)=42m @VGS=1.8V These devices are particularly suited for low Su... See More ⇒

 9.1. Size:578K  alfa-mos
 afn4228.pdf pdf_icon

AFN4248W

AFN4228 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4228, N-Channel enhancement mode 20V/ 8A,RDS(ON)=12m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 6A,RDS(ON)=15m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=20m @VGS=1.8V These devices are particularly suited for low Super h... See More ⇒

 9.2. Size:483K  alfa-mos
 afn4214w.pdf pdf_icon

AFN4248W

AFN4214W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=18m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo... See More ⇒

 9.3. Size:482K  alfa-mos
 afn4214.pdf pdf_icon

AFN4248W

AFN4214 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214, N-Channel enhancement mode 30V/9A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=20m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low ... See More ⇒

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Detailed specifications: AFN4134W, AFN4172S, AFN4172WS, AFN4210, AFN4210W, AFN4214, AFN4214W, AFN4228, AON7403, AFN4412, AFN4412W, AFN4422, AFN4424, AFN4424W, AFN4440, AFN4440W, AFN4486

Keywords - AFN4248W MOSFET specs

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