All MOSFET. AFN4248W Datasheet

 

AFN4248W Datasheet and Replacement


   Type Designator: AFN4248W
   Marking Code: 4248W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 650 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: SOP-8P
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AFN4248W Datasheet (PDF)

 ..1. Size:588K  alfa-mos
 afn4248w.pdf pdf_icon

AFN4248W

AFN4248W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4248W, N-Channel enhancement mode 20V/6.0A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/5.0A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/4.0A,RDS(ON)=42m@VGS=1.8V These devices are particularly suited for low Su

 9.1. Size:578K  alfa-mos
 afn4228.pdf pdf_icon

AFN4248W

AFN4228 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4228, N-Channel enhancement mode 20V/ 8A,RDS(ON)=12m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 6A,RDS(ON)=15m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=20m@VGS=1.8V These devices are particularly suited for low Super h

 9.2. Size:483K  alfa-mos
 afn4214w.pdf pdf_icon

AFN4248W

AFN4214W Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214W, N-Channel enhancement mode 30V/9A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=18m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.3. Size:482K  alfa-mos
 afn4214.pdf pdf_icon

AFN4248W

AFN4214 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4214, N-Channel enhancement mode 30V/9A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/8A,RDS(ON)=20m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low

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History: KQB2N60 | DMN2020UFCL | IRLU8743

Keywords - AFN4248W MOSFET datasheet

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