AFN4486 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN4486  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 285 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SOP-8P

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AFN4486 datasheet

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AFN4486

AFN4486 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4486, N-Channel enhancement mode 20V/ 9A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 7A,RDS(ON)=17m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=21m @VGS=1.8V These devices are particularly suited for low Super h

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AFN4486

AFN4424 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 36m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:600K  alfa-mos
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AFN4486

AFN4440W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.3. Size:576K  alfa-mos
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AFN4486

AFN4422 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4422, N-Channel enhancement mode 30V/ 6.8A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.0A,RDS(ON)=42m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/ 5.2A,RDS(ON)=50m @VGS=2.5V These devices are particularly suited for low Su

MOSTRAR MÁS

Otros transistores... AFN4248W, AFN4412, AFN4412W, AFN4422, AFN4424, AFN4424W, AFN4440, AFN4440W, IRFP064N, AFN4546, AFN4634WS, AFN4804, AFN4808W, AFN4822S, AFN4822WS, AFN4850WS, AFN4874WS