AFN4486 Todos los transistores

 

AFN4486 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AFN4486
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 285 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: SOP-8P
 

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AFN4486 Datasheet (PDF)

 ..1. Size:578K  alfa-mos
 afn4486.pdf pdf_icon

AFN4486

AFN4486 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4486, N-Channel enhancement mode 20V/ 9A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 7A,RDS(ON)=17m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=21m@VGS=1.8V These devices are particularly suited for low Super h

 9.1. Size:574K  alfa-mos
 afn4424.pdf pdf_icon

AFN4486

AFN4424 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:600K  alfa-mos
 afn4440w.pdf pdf_icon

AFN4486

AFN4440W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.3. Size:576K  alfa-mos
 afn4422.pdf pdf_icon

AFN4486

AFN4422 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4422, N-Channel enhancement mode 30V/ 6.8A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/ 5.2A,RDS(ON)=50m@VGS=2.5V These devices are particularly suited for low Su

MOSTRAR MÁS

Otros transistores... AFN4248W , AFN4412 , AFN4412W , AFN4422 , AFN4424 , AFN4424W , AFN4440 , AFN4440W , IRFP064N , AFN4546 , AFN4634WS , AFN4804 , AFN4808W , AFN4822S , AFN4822WS , AFN4850WS , AFN4874WS .

History: 7NM65L-TM3-T | SFG10R20AF | IRFH7932PBF | WFP5N60B | 7NM70L-TA3-T | 7NM65G-TF1-T

 

 
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