All MOSFET. AFN4486 Datasheet

 

AFN4486 Datasheet and Replacement


   Type Designator: AFN4486
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP-8P
 

 AFN4486 substitution

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AFN4486 Datasheet (PDF)

 ..1. Size:578K  alfa-mos
 afn4486.pdf pdf_icon

AFN4486

AFN4486 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4486, N-Channel enhancement mode 20V/ 9A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/ 7A,RDS(ON)=17m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/ 5A,RDS(ON)=21m@VGS=1.8V These devices are particularly suited for low Super h

 9.1. Size:574K  alfa-mos
 afn4424.pdf pdf_icon

AFN4486

AFN4424 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4424, N-Channel enhancement mode 40V/8A,RDS(ON)= 22m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/6A,RDS(ON)= 36m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for lo

 9.2. Size:600K  alfa-mos
 afn4440w.pdf pdf_icon

AFN4486

AFN4440W Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/5.6A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

 9.3. Size:576K  alfa-mos
 afn4422.pdf pdf_icon

AFN4486

AFN4422 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4422, N-Channel enhancement mode 30V/ 6.8A,RDS(ON)=36m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/ 6.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/ 5.2A,RDS(ON)=50m@VGS=2.5V These devices are particularly suited for low Su

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Datasheet: AFN4248W , AFN4412 , AFN4412W , AFN4422 , AFN4424 , AFN4424W , AFN4440 , AFN4440W , 5N50 , AFN4546 , AFN4634WS , AFN4804 , AFN4808W , AFN4822S , AFN4822WS , AFN4850WS , AFN4874WS .

History: AP3P7R0EJB | P3606BEA | RJK0853DPB | UPA1913 | CTD04N5P5 | MMIX1F160N30T | SVS7N60DD2TR

Keywords - AFN4486 MOSFET datasheet

 AFN4486 cross reference
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