IRLSZ14A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRLSZ14A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16 nS
Cossⓘ - Capacitancia de salida: 100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.155 Ohm
Paquete / Cubierta: TO220F
- Selección de transistores por parámetros
IRLSZ14A Datasheet (PDF)
irlsz14a.pdf

IRLSZ14AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.122 (Typ.)1231.Gate 2. Drain 3. SourceAbsolut
irlsz34a.pdf

IRLSZ34AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 20 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.033 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute
irlsz24a.pdf

IRLSZ24AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 14 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating AreaA (Max.) @ VDS = 60V Lower Leakage Current : 10 Lower RDS(ON) : 0.061 (Typ.)1231.Gate 2. Drain 3. SourceAbsolut
irlsz44a.pdf

IRLSZ44AAdvanced Power MOSFETFEATURESBVDSS = 60 V Logic Level Gate DriveRDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate ChargeTO-220F Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.02 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute M
Otros transistores... IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A , STP65NF06 , IRLSZ24A , IRLSZ34A , IRLSZ44A , IRLU010 , IRLU014 , IRLU014A , IRLU020 , IRLU024 .
History: STP20NM60 | APT6025BVR | 2N7064 | IXFK48N50Q | FQD5N15TF | IXFR80N60P3 | MTP2N50
History: STP20NM60 | APT6025BVR | 2N7064 | IXFK48N50Q | FQD5N15TF | IXFR80N60P3 | MTP2N50



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
2sa844 | 2sc1327 | 2sc3855 | 2sc945 transistor equivalent | 2sd427 | mje15032 equivalent | 2sc4834 | 2sd313 transistor equivalent