IRLSZ14A PDF and Equivalents Search

 

IRLSZ14A Specs and Replacement

Type Designator: IRLSZ14A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm

Package: TO220F

IRLSZ14A substitution

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IRLSZ14A datasheet

 ..1. Size:215K  samsung
 irlsz14a.pdf pdf_icon

IRLSZ14A

IRLSZ14A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.155 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.122 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut... See More ⇒

 9.1. Size:219K  samsung
 irlsz34a.pdf pdf_icon

IRLSZ14A

IRLSZ34A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.046 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 20 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.033 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute ... See More ⇒

 9.2. Size:218K  samsung
 irlsz24a.pdf pdf_icon

IRLSZ14A

IRLSZ24A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.075 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 14 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area A (Max.) @ VDS = 60V Lower Leakage Current 10 Lower RDS(ON) 0.061 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut... See More ⇒

 9.3. Size:221K  samsung
 irlsz44a.pdf pdf_icon

IRLSZ14A

IRLSZ44A Advanced Power MOSFET FEATURES BVDSS = 60 V Logic Level Gate Drive RDS(on) = 0.025 Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 30 A Lower Input Capacitance Improved Gate Charge TO-220F Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 60V Lower RDS(ON) 0.02 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute M... See More ⇒

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Detailed specifications: IRLS510A , IRLS520A , IRLS530A , IRLS540A , IRLS610A , IRLS620A , IRLS630A , IRLS640A , STP65NF06 , IRLSZ24A , IRLSZ34A , IRLSZ44A , IRLU010 , IRLU014 , IRLU014A , IRLU020 , IRLU024 .

Keywords - IRLSZ14A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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