AFN4896 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AFN4896
   Código: 4896
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 12 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: SOP-8P

Búsqueda de reemplazo de MOSFET AFN4896

AFN4896 Datasheet (PDF)

..1. Size:582K alfa-mos
afn4896.pdf

AFN4896 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/5.6A,RDS(ON)=125m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

9.1. Size:515K alfa-mos
afn4822ws.pdf

AFN4822WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=44m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

9.2. Size:537K alfa-mos
afn4804.pdf

AFN4804 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m@VGS=10V MOSFET, uses Advanced Trench Technology 40V/10A,RDS(ON)= 70m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

9.3. Size:515K alfa-mos
afn4822s.pdf

AFN4822S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=42m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

9.4. Size:580K alfa-mos
afn4850ws.pdf

AFN4850WS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4850WS, N-Channel enhancement mode 60V/8.5A,RDS(ON)=20m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/7.2A,RDS(ON)=28m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

9.5. Size:581K alfa-mos
afn4808w.pdf

AFN4808W Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4808W, N-Channel enhancement mode 20V/6.2A,RDS(ON)=30m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.6A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.8A,RDS(ON)=42m@VGS=1.8V These devices are particularly suited for low Su

9.6. Size:577K alfa-mos
afn4874ws.pdf

AFN4874WS Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4874WS, N-Channel enhancement mode 60V/12A,RDS(ON)=11m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/10A,RDS(ON)=13m@VGS=6.0V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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