AFN4896 Datasheet. Specs and Replacement

Type Designator: AFN4896  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: SOP-8P

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AFN4896 datasheet

 ..1. Size:582K  alfa-mos
 afn4896.pdf pdf_icon

AFN4896

AFN4896 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4896, N-Channel enhancement mode 100V/6.8A,RDS(ON)=115m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/5.6A,RDS(ON)=125m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited... See More ⇒

 9.1. Size:515K  alfa-mos
 afn4822ws.pdf pdf_icon

AFN4896

AFN4822WS Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=44m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited ... See More ⇒

 9.2. Size:537K  alfa-mos
 afn4804.pdf pdf_icon

AFN4896

AFN4804 Alfa-MOS 40V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m @VGS=10V MOSFET, uses Advanced Trench Technology 40V/10A,RDS(ON)= 70m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 9.3. Size:515K  alfa-mos
 afn4822s.pdf pdf_icon

AFN4896

AFN4822S Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.0A,RDS(ON)=42m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited fo... See More ⇒

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Detailed specifications: AFN4546, AFN4634WS, AFN4804, AFN4808W, AFN4822S, AFN4822WS, AFN4850WS, AFN4874WS, IRF540, AFN4900W, AFN4906, AFN4922W, AFN4924, AFN4924W, AFN4936S, AFN4936WS, AFN4946

Keywords - AFN4896 MOSFET specs

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