AFN4997 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AFN4997  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 90 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm

Encapsulados: SOP-8P

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AFN4997 datasheet

 ..1. Size:575K  alfa-mos
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AFN4997

AFN4997 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/5.6A,RDS(ON)=75m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.1. Size:574K  alfa-mos
 afn4996.pdf pdf_icon

AFN4997

AFN4996 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/6.8A,RDS(ON)=75m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 8.2. Size:583K  alfa-mos
 afn4998w.pdf pdf_icon

AFN4997

AFN4998W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=130m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit

 8.3. Size:582K  alfa-mos
 afn4998.pdf pdf_icon

AFN4997

AFN4998 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

MOSTRAR MÁS

Otros transistores... AFN4924, AFN4924W, AFN4936S, AFN4936WS, AFN4946, AFN4946BW, AFN4946W, AFN4996, IRF3710, AFN4998, AFN4998W, AFN5004S, AFN501DEA, AFN5800, AFN5800W, AFN5808W, AFN5904W