AFN4997 Datasheet. Specs and Replacement

Type Designator: AFN4997  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm

Package: SOP-8P

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AFN4997 datasheet

 ..1. Size:575K  alfa-mos
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AFN4997

AFN4997 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4997, N-Channel enhancement mode 90V/6.8A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/5.6A,RDS(ON)=75m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 8.1. Size:574K  alfa-mos
 afn4996.pdf pdf_icon

AFN4997

AFN4996 Alfa-MOS 90V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4996, N-Channel enhancement mode 90V/7.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench Technology 90V/6.8A,RDS(ON)=75m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for ... See More ⇒

 8.2. Size:583K  alfa-mos
 afn4998w.pdf pdf_icon

AFN4997

AFN4998W Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998W, N-Channel enhancement mode 100V/5.6A,RDS(ON)=120m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=130m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suit... See More ⇒

 8.3. Size:582K  alfa-mos
 afn4998.pdf pdf_icon

AFN4997

AFN4998 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN4998, N-Channel enhancement mode 100V/5.6A,RDS(ON)=130m @VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.2A,RDS(ON)=145m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited... See More ⇒

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Detailed specifications: AFN4924, AFN4924W, AFN4936S, AFN4936WS, AFN4946, AFN4946BW, AFN4946W, AFN4996, IRF3710, AFN4998, AFN4998W, AFN5004S, AFN501DEA, AFN5800, AFN5800W, AFN5808W, AFN5904W

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