AFN8495 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AFN8495
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.044 Ohm
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de AFN8495 MOSFET
AFN8495 Datasheet (PDF)
afn8495.pdf
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afn8412.pdf
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afn8471.pdf
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afn8439.pdf
AFN8439 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8439, N-Channel enhancement mode 30V/6.0A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=55m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for
Otros transistores... AFN7420 , AFN7424S , AFN7472S , AFN8205 , AFN8411 , AFN8412 , AFN8439 , AFN8471 , AON7506 , AFN8816 , AFN8822 , AFN8822S , AFN8832 , AFN8904 , AFN8918 , AFN8936 , AFN8968 .
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