All MOSFET. AFN8495 Datasheet

 

AFN8495 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN8495
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SOT-223

 AFN8495 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN8495 Datasheet (PDF)

 ..1. Size:585K  alfa-mos
 afn8495.pdf

AFN8495 AFN8495

AFN8459 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8459, N-Channel enhancement mode 30V/6.0A,RDS(ON)=44m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=50m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.1. Size:551K  alfa-mos
 afn8412.pdf

AFN8495 AFN8495

AFN8412 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8412, N-Channel enhancement mode 100V/3.6A,RDS(ON)=300m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/3.0A,RDS(ON)=310m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

 9.2. Size:594K  alfa-mos
 afn8471.pdf

AFN8495 AFN8495

AFN8471 Alfa-MOS 60V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8471, N-Channel enhancement mode 60V/5.8A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/4.6A,RDS(ON)=60m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.3. Size:584K  alfa-mos
 afn8439.pdf

AFN8495 AFN8495

AFN8439 Alfa-MOS 30V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8439, N-Channel enhancement mode 30V/6.0A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/5.5A,RDS(ON)=55m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for

 9.4. Size:576K  alfa-mos
 afn8411.pdf

AFN8495 AFN8495

AFN8411 Alfa-MOS 100V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8411, N-Channel enhancement mode 100V/5.8A,RDS(ON)=115m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/4.6A,RDS(ON)=125m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BSZ0904NSI | HIRF840F

 

 
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