AFN8832 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AFN8832 Datasheet (PDF)

..1. Size:685K alfa-mos
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AFN8832 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8832, N-Channel enhancement mode 20V/5.4A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.0A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Supe

9.1. Size:691K alfa-mos
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AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particul

9.2. Size:691K alfa-mos
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AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited fo

9.3. Size:586K alfa-mos
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AFN8816 Alfa-MOS 30V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5A,RDS(ON)=24m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m@VGS=2.5V These devices are particularly suited for low

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .