AFN8832 Datasheet. Specs and Replacement

Type Designator: AFN8832  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TSSOP-8P

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AFN8832 datasheet

 ..1. Size:685K  alfa-mos
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AFN8832

AFN8832 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8832, N-Channel enhancement mode 20V/5.4A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.0A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited for low Supe... See More ⇒

 9.1. Size:691K  alfa-mos
 afn8822s.pdf pdf_icon

AFN8832

AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particul... See More ⇒

 9.2. Size:691K  alfa-mos
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AFN8832

AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m @VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=32m @VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m @VGS=1.8V These devices are particularly suited fo... See More ⇒

 9.3. Size:586K  alfa-mos
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AFN8832

AFN8816 Alfa-MOS 30V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m @VGS=10V MOSFET, uses Advanced Trench Technology 30V/5A,RDS(ON)=24m @VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m @VGS=2.5V These devices are particularly suited for low ... See More ⇒

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Detailed specifications: AFN8411, AFN8412, AFN8439, AFN8471, AFN8495, AFN8816, AFN8822, AFN8822S, AO4407, AFN8904, AFN8918, AFN8936, AFN8968, AFN8987, AFN8987W, AFN8988, AFN8988W

Keywords - AFN8832 MOSFET specs

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