All MOSFET. AFN8832 Datasheet

 

AFN8832 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFN8832
   Marking Code: 8832
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.8 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.65 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TSSOP-8P

 AFN8832 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFN8832 Datasheet (PDF)

 ..1. Size:685K  alfa-mos
 afn8832.pdf

AFN8832 AFN8832

AFN8832 Alfa-MOS 20V N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8832, N-Channel enhancement mode 20V/5.4A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.0A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited for low Supe

 9.1. Size:691K  alfa-mos
 afn8822s.pdf

AFN8832 AFN8832

AFN8822S Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822S, N-Channel enhancement mode 20V/6.5A,RDS(ON)=32m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=35m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particul

 9.2. Size:691K  alfa-mos
 afn8822.pdf

AFN8832 AFN8832

AFN8822 Alfa-MOS 20V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8822, N-Channel enhancement mode 20V/7.2A,RDS(ON)=28m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/4.8A,RDS(ON)=32m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=45m@VGS=1.8V These devices are particularly suited fo

 9.3. Size:586K  alfa-mos
 afn8816.pdf

AFN8832 AFN8832

AFN8816 Alfa-MOS 30V Common-Drain N-Channel Technology Enhancement Mode MOSFET General Description Features AFN8816, N-Channel enhancement mode 30V/8A,RDS(ON)=21m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/5A,RDS(ON)=24m@VGS=4.5V to provide excellent RDS(ON), low gate charge. 30V/4A,RDS(ON)=27m@VGS=2.5V These devices are particularly suited for low

Datasheet: AFN8411 , AFN8412 , AFN8439 , AFN8471 , AFN8495 , AFN8816 , AFN8822 , AFN8822S , MMIS60R580P , AFN8904 , AFN8918 , AFN8936 , AFN8968 , AFN8987 , AFN8987W , AFN8988 , AFN8988W .

History: 2SK4022 | NCEP035N85GU | HGT055N15S

 

 
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